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Photoshop Cs6 Extended Serial Number
August 24, 2020 Photoshop Cs6 Extended Serial Number in 2020 See also Adobe software Photoshop References External links Category:Computing output devices Category:Xerox1. Field of the Invention The present invention relates to a capacitor that is provided on a semiconductor substrate, a method of manufacturing the capacitor, and a semiconductor device. 2. Description of the Related Art A conventional capacitor will be described. FIG. 6 is a sectional view of a conventional capacitor. Referring to FIG. 6, a conventional capacitor is formed in an isolation region 107 disposed on a semiconductor substrate 106. A bottom electrode 12 is provided on the isolation region 107. A dielectric film 14 is formed on the bottom electrode 12. A top electrode 16 is provided on the dielectric film 14. The bottom electrode 12, the dielectric film 14, and the top electrode 16 are formed by an organic material. A dielectric film layer (not shown) may be disposed between the bottom electrode 12 and the dielectric film 14. However, in the capacitor shown in FIG. 6, in a case where the distance (distance between the bottom electrode 12 and the top electrode 16) is set to be a predetermined distance, the influence of diffusion of impurities from the isolation region 107 is large, which makes it difficult to secure the capacitance. In order to solve the problem, a capacitor has been proposed, in which an amorphous silicon layer is used for a capacitor electrode, which is formed on the isolation region 107, instead of the bottom electrode 12 and the top electrode 16 formed from the organic material (see, e.g., Japanese Patent Laid-Open No. H9-233798). However, in the capacitor shown in FIG. 6, an etching process is performed on the dielectric film 14 and the top electrode 16 after forming the bottom electrode 12. Thus, since the bottom electrode 12 may be exposed to a moisture-containing atmosphere after the etching process, a capacitor, in which the bottom electrode 12 is damaged, may be formed. FIGS. 7 and 8 are sectional views of capacitors. Referring to FIG. 7, a method of forming a capacitor will be described. In a case where a capacitor is formed using a bottom electrode of an amorphous silicon layer, a dielectric film of an amorphous silicon layer is
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